A roadmap for electronic grade 2D materials
Summary¶
This roadmap article synthesizes community priorities for maturing two-dimensional materials toward electronic-grade quality at scales relevant to wafer manufacturing. It spans transition-metal dichalcogenides, graphene derivatives, and related layered semiconductors, emphasizing that bench demonstrations must advance along coordinated axes: synthesis and transfer, defect and interface control, metrology, reliability, and modeling. The document is explicitly multi-author and consensus-oriented rather than reporting a single experimental campaign.
Methods¶
The roadmap methodology aggregates expert judgment, literature synthesis, and thematic workshops (as described in the full PDF) to identify bottlenecks and research directions. Sections typically pair technology drivers with scientific challenges—for example, linking grain boundaries and dopant incorporation to device variability—calling out where atomistic modeling, continuum process models, and high-throughput experimentation should converge.
The document is explicitly multi-institution: contributors span synthesis, metrology, theory, and device integration. Readers should use the roadmap tables as bibliographic indexes into primary literature rather than treating the roadmap itself as a measurement study; each subsection’s citations carry the evidentiary weight for quantitative targets.
Findings¶
The roadmap stresses that exfoliation-quality films at large area require simultaneous progress in growth, transfer, contamination control, and in-line characterization, with computation listed among the pillars that must mature alongside experiment to predict defect distributions and interface electronic structure. Quantitative targets, timelines, and citations appear organized by theme in the journal article; readers should use those tables as authoritative benchmarks rather than this summary alone.
Themes recurring across sections include wafer-scale monolayer yield, deterministic transfer without wrinkle or polymer residue, suppression of pinholes and grain-boundary leakage currents in field-effect devices, and standardizing Raman/PL/transport metrics so that “electronic grade” becomes an operational specification rather than a slogan. The roadmap also highlights 2D semiconductors beyond graphene—TMDs and emerging layered magnets—as requiring specialized contamination budgets distinct from silicon CMOS lines.
Limitations¶
Broad scope means individual quantitative claims must be traced to cited primary sources; the roadmap itself is not a primary measurement study.
Corpus notes¶
Operators curating MAS benchmarks should copy quantitative targets (defect densities, mobility thresholds, wafer sizes) directly from the roadmap tables in the PDF rather than transcribing them here, because minor numeric revisions can appear between preprint and final 2D Materials issue layouts.
Relevance to group¶
Adri van Duin is a co-author; the roadmap connects group interests in 2D materials simulation to field-wide manufacturing readiness.